SSF8N80 800v n-channel mosfet www.goodark.com page 1 of 7 rev.1.1 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 8 i d @ t c = 100c continuous drain current, v gs @ 10v 5.1 i dm pulsed drain current 32 a power dissipation 178 w p d @t c = 25c linear derating factor 1.43 w/c v ds drain-source voltage 800 v v gs gate-to-source voltage 30 v e as single pulse avalanche energy @ l=25mh 512 mj i as avalanche current @ l=25mh 6.4 a t j t stg operating junction and storage temperature range -55 to + 150 c v dss 800v r ds (on) 1.38(typ.) i d 8a to-220 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSF8N80 800v n-channel mosfet www.goodark.com page 2 of 7 rev.1.1 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.7 /w r ja junction-to-ambient (t 10s) 62.5 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 800 v v gs = 0v, id = 250a 1.38 1.55 v gs =10v,i d = 3.5a r ds(on) static drain-to-source on-resistance 3.16 t j = 125 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 1.96 v t j = 125 1 v ds = 800v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =30v i gss gate-to-source forward leakage -100 na v gs = -30v q g total gate charge 24 q gs gate-to-source charge 7.3 q gd gate-to-drain("miller") charge 9.4 nc i d = 8a, v ds = 380v, v gs = 10v t d(on) turn-on delay time 20 t r rise time 40 t d(off) turn-off delay time 57 t f fall time 35 ns v gs =10v, vds=400v, r l =50,r gen =25 id=8a c iss input capacitance 1107 c oss output capacitance 120 c rss reverse transfer capacitance 4.7 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 8 a i sm pulsed source current (body diode) 32 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.87 1.4 v i s =7a, v gs =0v t rr reverse recovery time 1015 ns q rr reverse recovery charge 5414 nc t j = 25c, i f =8a, di/dt = 100a/s
SSF8N80 800v n-channel mosfet www.goodark.com page 3 of 7 rev.1.1 test circuits and waveforms switch waveforms: notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c
SSF8N80 800v n-channel mosfet www.goodark.com page 4 of 7 rev.1.1 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
SSF8N80 800v n-channel mosfet www.goodark.com page 5 of 7 rev.1.1 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSF8N80 800v n-channel mosfet www.goodark.com page 6 of 7 rev.1.1 mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ? 1 - 7 0 - - 7 0 - ? 2 - 7 0 - - 7 0 - ? 3 - 3 0 - 5 0 7 0 9 0 ? 4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to-220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? l ? 4 p1 e
SSF8N80 800v n-channel mosfet www.goodark.com page 7 of 7 rev.1.1 ordering and marking information device marking: SSF8N80 package (available) to-220 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
|
